june 200 3 200 3 fairchild semiconductor corporation fds6 690a rev e (w) fds6 690a single n-channel, logic-level, powertrench mosfet general description this n-channel logic level mosfet is produced using fairchild semiconductor?s advanced powertrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. these devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. features 1 1 a, 30 v. r ds(on) = 12.5 m w @ v gs = 10 v r ds(on) = 1 7 .0 m w @ v gs = 4.5 v fast switching speed low gate charge high performance trench technology for extremely low r ds(on) high power and current handling capability s d s s so-8 d d d g d d d d s s s g pin 1 so-8 4 3 2 1 5 6 7 8 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 30 v v gss gate-source voltage 20 v i d drain current ? continuous (note 1a) 11 a ? pulsed 50 power dissipation for single operation (note 1a) 2.5 p d (note 1b) 1. 0 w t j , t stg operating and storage junction temperature range ? 55 to +1 50 c thermal characteristics r q ja thermal resistance, junction-to-ambient (note 1a) 50 c/w r q ja thermal resistance, junction-to-ambient (note 1 b ) 125 r q jc thermal resistance, junction-to-case (note 1) 25 package marking and ordering information device marking device reel size tape width quantity fds6 690a fds6 690a 13?? 12mm 2500 units fds6 690a
fds6 690 rev e (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = 250 m a 30 v d bv dss d t j breakdown voltage temperature coefficient i d = 250 m a, referenced to 25 c 25 mv/ c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 m a v ds = 24 v, v gs = 0 v , t j =55 c 1 0 m a i gss gate?body leakage v gs = 20 v, v ds = 0 v 100 na on characteristics (note 2) v gs( th ) gate threshold voltage v ds = v gs , i d = 250 m a 1 1.9 3 v d v gs( th) d t j gate threshold voltage temperature coefficient i d = 250 m a, referenced to 25 c ? 5 mv/ c r ds(on) static drain?source on?resistance v gs = 10 v, i d = 1 1 a v gs = 4.5 v, i d = 1 0 a v gs = 10 v, i d = 1 1 a, t j =125 c 9.8 12.0 13.7 12.5 17 .0 22.0 m w i d(on) on?state drain current v gs = 10 v, v ds = 5 v 50 a g fs forward transconductance v ds = 5 v, i d = 1 1 a 48 s dynamic characteristics c iss input capacitance 1205 pf c oss output capacitance 290 pf c rss reverse transfer capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 115 pf r g gate resistance v gs = 15 mv, f = 1.0 mhz 2.4 w switching characteristics (note 2) t d(on) turn?on delay time 9 1 9 ns t r turn?on rise time 5 10 ns t d(off) turn?off delay time 28 44 ns t f turn?off fall time v dd = 15 v, i d = 1 a, v gs = 10 v, r gen = 6 w 9 19 ns q g total gate charge 12 1 6 nc q gs gate?source charge 3.4 nc q gd gate?drain charge v ds = 15 v, i d = 1 1 a, v gs = 5 v 4.0 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current 2.1 a v sd drain?source diode forward voltage v gs = 0 v, i s = 2.1 a (note 2) 0.74 1.2 v t rr diode reverse recovery time 24 ns q rr diode reverse recovery charge i f = 1 1 a, d if / d t = 100 a/s 27 nc notes: 1. r q ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r q jc is guaranteed by design while r q ca is determined by the user's board design. a) 50 c/w when mounted on a 1in 2 pad of 2 oz copper b) 125c/w when mounted on a minimum pad . scale 1 : 1 on letter size paper 2 test: pulse width < 300 m s, duty cycle < 2.0% fds6 690a
fds6 690 rev e (w) typical characteristics 0 10 20 30 40 50 0 0.5 1 1.5 2 v ds , drain-source voltage (v) i d , drain current (a) 3.0v 6.0v 3.5.v 4.0v v gs = 10v 4.5v 0.5 1 1.5 2 2.5 3 0 10 20 30 40 50 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 3.0v 3.5v 4.5v 10v 6.0v 4.0v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 175 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 11.0a v gs = 10v 0 0.01 0.02 0.03 0.04 0.05 2 4 6 8 10 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 5.5a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 10 20 30 40 50 1 1.5 2 2.5 3 3.5 4 v gs , gate to source voltage (v) i d , drain current (a) t a = 125 o c -55 o c v ds = 5v 25 o c 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. fds6 690a
fds6 690 rev e (w) typical characteristics 0 2 4 6 8 10 0 5 10 15 20 25 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 11.0a v ds = 10v 20v 15v 0 400 800 1200 1600 0 5 10 15 20 25 30 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 10s 1s 100ms r ds(on) limit v gs = 10v single pulse r q ja = 125 o c/w t a = 25 o c 10ms 1ms 100s 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 t 1 , time (sec) p(pk), peak transient power (w) single pulse r q ja = 125c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r q ja (t) = r(t) * r q ja r q ja = 125 c/w t j - t a = p * r q ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. fds6 690a
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? i 2 c? implieddisconnect? isoplanar? rev. i5 acex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos tm ensigna tm fact? power247? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? silent switcher ? smart start? spm? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? vcx? across the board. around the world.? the power franchise? programmable active droop?
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